CZ Silicon Wafer P Type Boron Doped (10mm)
| CZ Silicon Wafer P-Type Boron Doped | |
| Product No | NRE-44007 |
| Type | P-Type |
| Formula | Zr |
| Crystal Orientation | <100> |
| Oxygen Contents | 12.5-16.5 |
| Thickness | 275 μm |
| Diameter (mm) | 10mm |
| Doping | Boron |
| Carbon Contents | ≤1 |
| RRG (%) | ≤12 |
| Surface | Single Side Polished |
CZ Silicon Wafer P-Type Boron Doped
