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GaN Wafer (Purity: >99.9%, Diameter: 2″, Si-Doped, N type)

GaN Wafer
Product No NRE-45008
CAS 25617-97-4
Purity >99.9%
Doping Si-doped
Diameter 2″
Structure NA
Color NA
Thickness 4 µm ± 1µm
Polished Single Side Polished
Boiling Point NA

GaN Wafer

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