GaN Wafer (Purity: >99.9%, Diameter: 2″, Si-Doped, N type)
GaN Wafer | |
Product No | NRE-45008 |
CAS | 25617-97-4 |
Purity | >99.9% |
Doping | Si-doped |
Diameter | 2″ |
Structure | NA |
Color | NA |
Thickness | 4 µm ± 1µm |
Polished | Single Side Polished |
Boiling Point | NA |
GaN Wafer