Phosphorus Doped Silicon Wafer (4 inch, N Type)
| Phosphorus Doped Silicon Wafer | |
| Product No | NRE-44021 |
| CAS | NA |
| Crystal method | CZ |
| Type | N-Type |
| Diameter (mm) | 4″ (101.6mm) |
| Doping | Phosphorous |
| Thickness | 250-500μm |
| Crystal Orientation | <100> |
| Resistivity | 1-10ohm-cm |
| RRG (%) | ≤12 % |
| Oxygen Contents (ppma) | 12.5-16.5 |
Phosphorus Doped Silicon Wafer
