Aluminium Nitrate Substrate (Purity: 99.5%)
| Aluminium Nitrate Substrate | |
| Product No | NRE-45001 |
| CAS | 13473-90-0 |
| Purity | > 99.5 % |
| Thermal Conductivity | ≥170 W/m·k |
| Density | ≥3.30 g/cm3 |
| Appearance | Dark Gray |
| Melting Point | 66 °C |
| Boiling Point | 150 °C |
Aluminium Nitrate Substrate
Introduction:
Aluminium nitrate substrates are semiconductor materials known for their excellent thermal conductivity, high dielectric strength, and wide bandgap. AlN is a hexagonal crystal structure, making it an attractive substrate for various applications, particularly in the fields of electronics and optoelectronics. Its properties allow for efficient heat dissipation and support for high-frequency and high-power devices, making it ideal for advanced semiconductor technologies.
Applications
High-Power Electronics:
AlN substrates are used in high-power electronic devices, including transistors and diodes, due to their ability to efficiently dissipate heat and maintain performance under high power conditions.
RF and Microwave Devices:
They are widely employed in radio-frequency (RF) and microwave applications, where their high thermal conductivity and dielectric properties enable efficient signal processing and amplification.
LEDs and Laser Diodes:
Aluminium nitrate substrates are used in the fabrication of light-emitting diodes (LEDs) and laser diodes, especially in ultraviolet (UV) and blue light applications. Their ability to support high-quality epitaxial growth of gallium nitrate (GaN) enhances device performance.
Power Amplifiers:
AlN is used in the production of power amplifiers for communication systems, providing the necessary thermal management and high-frequency performance.
High-Temperature Electronics:
Due to their stability at elevated temperatures, AlN substrates are suitable for high-temperature applications, including sensors and automotive electronics.
Optoelectronic Devices:
These substrates are also used in various optoelectronic devices, facilitating the integration of active layers with suitable thermal and electrical properties.
Substrates for Heterostructures:
AlN substrates are ideal for creating heterostructures with other materials, such as GaN, which is crucial for developing advanced electronic and optoelectronic devices.
