Our Products

Aluminum Arsenide Powder

Aluminum Arsenide Powder

Aluminum Arsenide Powder
Product No NRE-11007
CAS No. 22831-42-1
Formula AlAs
APS <40 µm (Can be Customized)
Purity 99.9%
Color Gray
Molecular Weight 101.9 g/mol
Density 3.72 g/cm3
Melting Point 1740 °C
Boiling Point NA

Aluminum Arsenide Powder

Aluminum arsenide (AlAs) is a semiconductor material that has several potential applications in various fields. One of its primary uses is in the development of electronic and optoelectronic devices due to its unique properties. Some of the applications of aluminum arsenide powder include:

Electronics: Aluminum arsenide is commonly used in the production of high-speed integrated circuits, particularly in the field of telecommunications. It is used as a substrate for epitaxial growth in the production of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). Its wide bandgap and high electron mobility make it suitable for these applications.

Optoelectronics: Due to its excellent optical properties, aluminum arsenide is used in the manufacture of light-emitting diodes (LEDs), laser diodes, and other optoelectronic devices. It is often used in the construction of heterostructure devices to improve their efficiency and performance. Additionally, it is used in the production of photovoltaic devices, solar cells, and photodetectors.

Research and Development: Aluminum arsenide is also utilized in research and development activities, particularly in the field of semiconductor physics and material science. Its properties make it a valuable material for studying fundamental phenomena in solid-state physics and for developing new semiconductor technologies.

Thermal Interface Materials: In some cases, aluminum arsenide powder is employed in thermal interface materials, owing to its high thermal conductivity. These materials are used to facilitate efficient heat transfer between components in electronic devices, thereby helping to manage and dissipate heat effectively.

Substrate for Epitaxial Growth: Aluminum arsenide serves as a substrate material for the epitaxial growth of other compound semiconductors, such as gallium arsenide (GaAs) and indium gallium arsenide (InGaAs). This capability is crucial for creating complex semiconductor structures and optimizing the performance of various electronic and optoelectronic devices.