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Aluminum Nitride Sputtering Target

Aluminum Nitride Sputtering Target

Aluminum Nitride Sputtering Target
Product No NRE-43010
CAS No. 24304-00-5
Formula AlN
Molecular Weight 40.98 g/mol
Purity 99.9%
Density 3.3 g/cm3
Thickness  3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Electrical Resistivity NA
Electronegativity NA

Aluminum Nitride Sputtering Target

Aluminum nitride sputtering target are widely used in various applications due to their unique properties. are advanced materials widely used in thin-film deposition processes, particularly in the semiconductor and optoelectronic industries. Is a wide-bandgap semiconductor known for its excellent thermal conductivity, electrical insulation properties, and high thermal stability.

Semiconductors: AlN is used in the fabrication of semiconductor devices, particularly for power electronics and high-frequency applications. Its wide bandgap and thermal conductivity make it ideal for high-performance components.

Optoelectronics: AlN is employed in the production of optoelectronic devices, such as LEDs and laser diodes, particularly in the ultraviolet (UV) range. Its ability to form heterostructures with other materials is crucial in these applications.

Ceramics and Coatings: AlN targets are used to produce ceramic coatings that provide excellent thermal stability, corrosion resistance, and electrical insulation, making them suitable for various industrial applications.

Piezoelectric Devices: AlN has piezoelectric properties, making it useful in the production of sensors and actuators, particularly in microelectromechanical systems (MEMS).

Thermal Management: AlN due to its high thermal conductivity,  thermal management applications, helping dissipate heat in electronic devices and systems.

 

 

 

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