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Boron Doped P Type Silicon Wafer

Boron-Doped P-Type Silicon Wafer

Boron-Doped P-Type Silicon Wafer
Product No. CAS Purity Diameter (mm) type Doping Thickness Resistivity
NRE-44003 NA NA 4” (101.6mm) P-type Boron 250-500μm 1-10ohm-cm
Crystal method CZ
RRG (%) ≤12
Oxygen Contents (ppma) 12.5-16.5
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