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Boron Doped P Type Silicon Wafer

Boron Doped P Type Silicon Wafer
Product No NRE-44003
Type P-type
Formula NA
Crystal method CZ
Purity NA
Thickness 250-500μm
Diameter (mm) 4” (101.6mm)
Doping Boron
Resistivity 1-10ohm-cm
RRG (%) ≤12
Oxygen Contents (ppma) 12.5-16.5

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