Boron Doped P Type Silicon Wafer
| Boron Doped P Type Silicon Wafer | |
| Product No | NRE-44003 |
| Type | P-type |
| Formula | Si |
| Crystal method | CZ |
| Purity | NA |
| Thickness | 250-500μm |
| Diameter (mm) | 4” (101.6mm) |
| Doping | Boron |
| Resistivity | 1-10ohm-cm |
| RRG (%) | ≤12 |
| Oxygen Contents (ppma) | 12.5-16.5 |
Boron Doped P Type Silicon Wafer
