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CVD Graphene on Silicon Wafer (Purity: 99.9%, Size: 1*1 cm, P-Doped)

CVD Graphene on Silicon Wafer
Product No NRE-44006
Type P-Doped
Crystal method CZ
Purity > 99.9%
Thickness 525 +/- 20 μm
Hall Electron Mobility on SiO2/Si 4000 cm2/Vs
Doping Boron
Resistivity <0.005 Ω·cm
Orientation <100>
Sheet Resistance 450±40 Ω/sq (1cm x1cm)

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