CZ Silicon Wafer P Type Boron Doped (10mm)
CZ Silicon Wafer P-Type Boron Doped | |
Product No | NRE-44007 |
Type | P-Type |
Formula | Zr |
Crystal Orientation | <100> |
Oxygen Contents | 12.5-16.5 |
Thickness | 275 μm |
Diameter (mm) | 10mm |
Doping | Boron |
Carbon Contents | ≤1 |
RRG (%) | ≤12 |
Surface | Single Side Polished |
CZ Silicon Wafer P-Type Boron Doped