Our Products

DSP Silicon Wafer P Type (12″,Boron Doped)

DSP Silicon Wafer P Type
Product No NRE-44009
Type P Type
Impurity ≦1E10 Atoms/cm²
Crystal method CZ
Thickness 775±25μm
Diameter (mm) 12” (300±0.2mm)
Doping Boron
Resistivity 1-100Ω/cm
Particle ≦50 @ 0.20µm

DSP Silicon Wafer P Type

error: