DSP Silicon Wafer P Type (12″,Boron Doped)
DSP Silicon Wafer P Type | |
Product No | NRE-44009 |
Type | P Type |
Impurity | ≦1E10 Atoms/cm² |
Crystal method | CZ |
Thickness | 775±25μm |
Diameter (mm) | 12” (300±0.2mm) |
Doping | Boron |
Resistivity | 1-100Ω/cm |
Particle | ≦50 @ 0.20µm |
DSP Silicon Wafer P Type