Gallium Telluride Sputtering Targets | |
Product No | NRE-43424 |
CAS No. | 12024-27-0 |
Formula | Ga2Te3 |
Molecular Weight | 522.25 g/mol |
Purity | >99.9% |
Density | 5.57 g/cm3 |
Thickness | 3 mm ± 0.5mm (can be customized) |
Diameter | 50 mm ± 1mm (can be customized) |
Shape | Round |
Resistivity | NA |
Thermal Conductivity | NA |
Gallium Telluride Sputtering Targets
Gallium telluride (GaTe) sputtering targets are used in various applications, primarily in the fields of optoelectronics and materials science. Here are some key applications.
Optoelectronics
Light-Emitting Diodes (LEDs): GaTe is utilized in the production of LEDs, especially in the infrared spectrum.
Laser Diodes: It is employed in laser diodes, contributing to efficient light emission.
Photodetectors
Infrared Sensors: GaTe is suitable for photodetectors that operate in the infrared range, making it valuable for imaging and sensing applications.
Thin Film Solar Cells
Photovoltaics: GaTe can be used as a semiconductor layer in thin-film solar cells, helping to improve energy conversion efficiency.
Nonlinear Optical Applications
Frequency Conversion: GaTe exhibits nonlinear optical properties, making it useful for devices that require frequency doubling and other nonlinear optical effects.
2D Materials Research
Layered Structures: As a member of the transition metal dichalcogenides (TMDs), GaTe is of interest in research for developing new 2D materials for advanced electronics.
Thermal Imaging
Thermal Detectors: GaTe is also being explored for thermal imaging applications due to its semiconductor properties.
Summary
Gallium telluride sputtering targets are valuable in various advanced applications, particularly in optoelectronics and sensing technologies. Their unique properties make them significant for developing innovative devices in these fields.