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Gallium Telluride Sputtering Targets

Gallium Telluride Sputtering Targets

Gallium Telluride Sputtering Targets
Product No NRE-43424
CAS No. 12024-27-0
Formula Ga2Te3
Molecular Weight 522.25 g/mol
Purity >99.9%
Density 5.57 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Gallium Telluride Sputtering Targets

Gallium telluride (GaTe) sputtering targets are used in various applications, primarily in the fields of optoelectronics and materials science. Here are some key applications.

Optoelectronics

Light-Emitting Diodes (LEDs): GaTe is utilized in the production of LEDs, especially in the infrared spectrum.

Laser Diodes: It is employed in laser diodes, contributing to efficient light emission.

 Photodetectors

Infrared Sensors: GaTe is suitable for photodetectors that operate in the infrared range, making it valuable for imaging and sensing applications.

Thin Film Solar Cells

Photovoltaics: GaTe can be used as a semiconductor layer in thin-film solar cells, helping to improve energy conversion efficiency.

Nonlinear Optical Applications

Frequency Conversion: GaTe exhibits nonlinear optical properties, making it useful for devices that require frequency doubling and other nonlinear optical effects.

 2D Materials Research

Layered Structures: As a member of the transition metal dichalcogenides (TMDs), GaTe is of interest in research for developing new 2D materials for advanced electronics.

Thermal Imaging

Thermal Detectors: GaTe is also being explored for thermal imaging applications due to its semiconductor properties.

Summary

Gallium telluride sputtering targets are valuable in various advanced applications, particularly in optoelectronics and sensing technologies. Their unique properties make them significant for developing innovative devices in these fields.

 

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