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Germanium Dioxide Sputtering Targets

Germanium Dioxide Sputtering Targets

Germanium Dioxide Sputtering Targets
Product No NRE-43431
CAS No. 1310-53-8
Formula GeO2
Molecular Weight 104.6388 g/mol
Purity >99.9%
Density 4.228 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Germanium Dioxide Sputtering Targets

Germanium dioxide (GeO₂) sputtering targets are utilized in various applications due to their unique properties as a semiconductor and insulator. Here are some key applications.

Optoelectronics

Optical Coatings: GeO₂ is used in optical coatings, providing high refractive index layers for lenses, mirrors, and other optical components.

Waveguides: Employed in the fabrication of optical waveguides for integrated photonics.

 Thin Film Transistors (TFTs)

Electronics: GeO₂ can be used as a gate dielectric material in thin film transistors, improving performance in display technologies.

 Sensors

Gas and Chemical Sensors: The material can be used in sensor applications, particularly for detecting gases and environmental monitoring.

 Memory Devices

Non-Volatile Memory: GeO₂ is explored for use in phase-change memory and other non-volatile memory technologies, benefiting from its switching capabilities.

High-Performance Dielectrics

Capacitors and RF Devices: GeO₂ can serve as a dielectric material in capacitors, contributing to improved performance in radio frequency (RF) and microwave applications.

Research and Development

Material Studies: GeO₂ is of interest in materials science for the development of new semiconductors and advanced electronic materials.

 

 

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