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Germanium Disulfide Sputtering Targets

Germanium Disulfide Sputtering Targets

Germanium Disulfide Sputtering Targets
Product No NRE-43432
CAS No. 12025-34-2
Formula GeS2
Molecular Weight 136.75 g/mol
Purity >99.9%
Density 2.94 g/cm−3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Germanium Disulfide Sputtering Targets

Germanium disulfide (GeS₂) sputtering targets have a range of applications, particularly in the fields of electronics, photonics, and materials science. Here are some key applications.

 Optoelectronic Devices

Photodetectors: GeS₂ can be used in photodetectors, especially in the infrared range, making it suitable for imaging and sensing applications.

Light-Emitting Diodes (LEDs): It is also explored for use in LEDs, particularly for specific wavelengths of light.

 Chalcogenide Glasses

Data Storage: As a member of the chalcogenide family, GeS₂ is utilized in phase-change memory and other data storage technologies, benefiting from its ability to switch between amorphous and crystalline states.

 Thin Film Solar Cells

Photovoltaics: GeS₂ can be incorporated into thin-film solar cells as a light-absorbing layer, enhancing energy conversion efficiency.

 Nonlinear Optics

Optical Devices: Due to its nonlinear optical properties, GeS₂ can be used in devices for frequency conversion and other nonlinear processes.

Thermal Imaging

Infrared Sensors: GeS₂ is suitable for thermal imaging applications, providing sensitivity to infrared radiation.

 Research and Development

Materials Science: GeS₂ is of interest for research into new materials for photonics and electronics, contributing to the development of advanced devices.

Summary

Germanium disulfide sputtering targets are valuable materials in optoelectronics, data storage, and thermal imaging applications. Their unique properties enable advancements in various high-tech fields, making them important for ongoing research and innovation.

 

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