Hafnium Aluminium Oxide Sputtering Target (HfAlO2, Purity: 99.99%)
Hafnium Aluminium Oxide Sputtering Target
Hafnium Aluminium Oxide Sputtering Target | |
Product No | NRE-43062 |
CAS No. | NA |
Formula | HfAlO2 |
Molecular Weight | NA |
Purity | >99.9% |
Density | NA |
Thickness | 3 mm ± 0.5mm (can be customized) |
Diameter | 50 mm ± 1mm (can be customized) |
Shape | Round |
Resistivity | 9 10x Ω-m |
Thermal Expansion | NA |
Hafnium Aluminium Oxide Sputtering Target
Hafnium aluminum oxide (HfAlO2) sputtering targets are materials used to deposit thin films of hafnium aluminum oxide through the sputtering process, a physical vapor deposition (PVD) technique. HfAlO2 is a compound semiconductor that combines the properties of hafnium oxide (HfO₂) and aluminum oxide (Al₂O₃), resulting in a material with enhanced electrical and optical characteristics.
HfAlO2 is known for its high dielectric constant, excellent thermal stability, and good insulating properties, making it particularly valuable in advanced electronic applications. The ability to control the composition and thickness of HfAlO2 films through sputtering allows for precise tailoring of their properties for specific uses.
Applications of Hafnium Aluminum Oxide Sputtering Targets
Hafnium aluminum oxide (HfAlO2) sputtering targets are used to deposit thin films of hafnium aluminum oxide, which exhibit unique properties beneficial for various advanced applications. Here are some key applications:
High-k Dielectrics:
Semiconductor Devices: HfAlO2 is widely used as a high-k dielectric material in metal-oxide-semiconductor (MOS) devices. Its high dielectric constant helps reduce gate leakage currents and improve capacitance in transistors.
Gate Dielectrics:
FinFET Technology: In advanced FinFET (Fin Field-Effect Transistor) devices, HfAlO is employed as a gate dielectric to enhance performance while reducing power consumption.
Memory Devices:
Non-Volatile Memory: HfAlO2 is used in resistive random-access memory (ReRAM) applications, where its properties facilitate improved switching performance.
Optoelectronics:
Optical Coatings: Hafnium aluminum oxide films can be used in optical coatings for lenses and mirrors, benefiting from their high refractive index and transparency in certain wavelengths.
Thin-Film Transistors (TFTs):
Display Technologies: HfAlO2 is utilized in the fabrication of TFTs for LCD and OLED displays, providing excellent electrical insulation and performance.
Protective Coatings:
Wear and Corrosion Resistance: HfAlO2 coatings can enhance the durability of components in harsh environments, providing protection against wear and chemical corrosion.
Piezoelectric Devices:
Microelectromechanical Systems (MEMS): HfAlO2 films can be incorporated into MEMS devices for improved performance in sensors and actuators.