Hafnium Oxide Sputtering Target (HfO2, Purity: 99.99%)
Hafnium Oxide Sputtering Target
| Hafnium Oxide Sputtering Target | |
| Product No | NRE-43063 |
| CAS No. | 12055-23-1 |
| Formula | HfO2 |
| Molecular Weight | 210.49 g/mol |
| Purity | >99.9% |
| Density | 9.68 g/cm³ |
| Thickness | 3 mm ± 0.5mm (can be customized) |
| Diameter | 50 mm ± 1mm (can be customized) |
| Shape | Round |
| Resistivity | 9 10x Ω-m |
| Thermal Expansion | NA |
Hafnium Oxide Sputtering Target
Introduction
Hafnium oxide (HfO₂) sputtering target are materials used in the deposition of hafnium oxide thin films through sputtering techniques. HfO₂ is recognized for its high dielectric constant, excellent thermal stability, and optical properties, making it a crucial material in various advanced applications.
Applications of Hafnium Oxide Sputtering Targets
Semiconductor Devices:
HfO₂ is widely used as a high-k dielectric material in transistors and capacitors. Its ability to improve capacitance while reducing leakage currents is essential for modern semiconductor technology, particularly in advanced CMOS devices.
Optical Coatings:
Hafnium oxide thin films are applied in optical coatings for lenses, mirrors, and filters. Their optical properties, including high refractive index and transparency in the visible range, enhance the performance of optical devices.
Memory Devices:
HfO₂ is utilized in non-volatile memory technologies, such as resistive random-access memory (ReRAM) and ferroelectric RAM (FeRAM), due to its favorable dielectric and switching properties.
Barrier Layers:
In microelectronics, HfO₂ serves as an effective diffusion barrier layer, preventing the migration of metals in interconnects and enhancing device reliability.
Research and Development:
Hafnium oxide targets are important in materials science research, enabling the exploration of new functionalities in thin film technologies and their integration into emerging devices.
