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Heavily Doped Silicon Wafer (2 inches, N Type)

Heavily Doped Silicon Wafer
Product No NRE-44013
Type N-Type
Crystal method CZ
Crystal Orientation 12.5-16.5 ppma
Thickness 275 μm
Diameter (mm) 2” (50.8mm)
Doping Boron
Resistivity 1-10ohm-cm
Surface Both Side Polished
RRG (%) ≤12 %

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