Heavily Doped Silicon Wafer (2 inches, N Type)
| Heavily Doped Silicon Wafer | |
| Product No | NRE-44013 |
| Type | N-Type |
| Crystal method | CZ |
| Crystal Orientation | 12.5-16.5 ppma |
| Thickness | 275 μm |
| Diameter (mm) | 2” (50.8mm) |
| Doping | Boron |
| Resistivity | 1-10ohm-cm |
| Surface | Both Side Polished |
| RRG (%) | ≤12 % |
Heavily Doped Silicon Wafer
