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Silicon Carbide Wafers N Type (12 inch, Phosphorus Doped)

Silicon Carbide Wafers N-Type (12 inches, Phosphorus Doped)

Silicon Carbide Wafers N-Type (12 inches, Phosphorus Doped)
Product No. CAS Purity Diameter (mm) Doping Surface Thickness RRG
NRE-44025 409-21-2 NA 12” (304.8mm) Phosphorous Single Side Polished 275 μm ≤12 %
Crystal Orientation <100>
Crystal method CZ
Carbon Contents ≤1 ppma
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