Titanium Nitride (TiN) Nanopowder / Nanoparticles 5wt% Ethanol Dispersion (TiN, 99.2+%, 20nm)
The nano-titanium nitride has a high melting point (2950 °C), high hardness, high-temperature chemical stability and excellent thermal conductivity properties. Also, it possesses high performance infrared absorption and UV-shielding more than 80%. Its sintering temperature is low. Nano-titanium nitride (TiN) is an excellent ceramic material……
Titanium Nitride (TiN) Nanopowder / Nanoparticles 5wt% Ethanol Dispersion (TiN, 99.2+%, 20nm) | |||||||
---|---|---|---|---|---|---|---|
Product No. | CAS No. | Formula | Molecular Weight | APS | Purity | Color | Morphology |
NRE-2078 | NA | TiN | NA | 20nm | 99.2% | Black | NA |
Concentration | NA | ||||||
Solvent | NA | ||||||
pH | NA |
Titanium Nitride Nanopowder (TiN) Certificate of Analysis | |||||
---|---|---|---|---|---|
Ti |
N |
C |
Fe |
Ni |
Si |
77.87% |
21.88% |
2ppm |
15ppm |
5ppm |
18ppm |
Titanium Nitride Nanopowder (TiN) Product Features:
The nano-titanium nitride has a high melting point (2950 °C), high hardness, high-temperature chemical stability and excellent thermal conductivity properties. Also, it possesses high performance infrared absorption and UV-shielding more than 80%. Its sintering temperature is low. Nano-titanium nitride (TiN) is an excellent ceramic material.
Titanium Nitride Nanopowder (TiN) Applications:
Mainly used for Modified macromolecule polymers and some functional energy saving films. Artificial limbs; Barrier layer in contact and interconnect metallization; Biological materials cutting tools; Gate electrode in metal-oxide-semiconductor (MOS) transistors; Low-barrier Schottky diode; Optical devices in aggressive environments; Plastic molds; Prostheses; Wear-resistant coating.
Titanium Nitride Nanopowder (TiN) Storage Conditions:
Damp reunion will affect its dispersion performance and using effects, therefore, this product should be sealed in vacuum and stored in cool and dry room and it should not be exposure to air. In addition, the product should be avoided under stress.