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Tungsten Disilicide Sputtering Targets

Tungsten Disilicide Sputtering Targets

Tungsten Disilicide Sputtering Targets
Product No NRE-43286
CAS No. 12039-88-2
Formula WSi2
Molecular Weight 240.01
Purity >99.9%
Density 9.3 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Tungsten Disilicide Sputtering Targets

Introduction

Tungsten disilicide (WSi₂) is a compound known for its high melting point, excellent thermal stability, and electrical conductivity. It is a type of transition metal silicide that finds applications in various high-performance fields, particularly in the semiconductor and materials science industries. Sputtering targets made from tungsten disilicide are used in physical vapor deposition (PVD) processes to create thin films with specific electrical and mechanical properties.

Applications

Semiconductor Devices: WSi₂ is commonly used as a contact material in integrated circuits and semiconductor devices, providing low-resistance connections that enhance overall performance.

Thin Film Transistors (TFTs): Tungsten disilicide is utilized in the fabrication of thin film transistors, particularly in display technologies and various electronic applications.

High-Temperature Applications: Due to its thermal stability, WSi₂ is suitable for use in environments with high temperatures, such as in aerospace components and high-performance electronics.

Resistive and Capacitive Devices: WSi₂ can be employed in the development of resistive switching devices and capacitors, contributing to advancements in electronic component design.

Sensors: The material’s properties make it suitable for use in certain sensor applications, where stability and performance are critical.

 

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