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Zinc Oxide doped with Gallium Oxide Sputtering Targets

Zinc Oxide doped with Gallium Oxide Sputtering Targets

Zinc Oxide doped with Gallium Oxide Sputtering Targets
Product No NRE-43291
CAS No. 52934-06-2
Formula ZnO/Ga2O3
Molecular Weight 268.853
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

 ZnO/Ga2O3 Sputtering Targets Targets

Introduction:

Zinc oxide  doped with gallium oxide sputtering targets  is a semiconductor material that combines the properties of  ZnO/Ga2O3 with the benefits of gallium doping. This doping enhances the electrical conductivity and optical properties of zinc oxide, making it particularly valuable for a variety of applications in electronics and optoelectronics.

Applications:

Transparent Conductive Oxides (TCOs):

Zinc oxide  doped with gallium oxide sputtering targets is widely used in the fabrication of transparent conductive films for applications in displays, touch screens, and solar cells, where both high optical transparency and electrical conductivity are essential.

Optoelectronic Devices:

The material is employed in various optoelectronic applications, including light-emitting diodes (LEDs) and laser diodes, where its enhanced properties improve device efficiency and performance.

Semiconductor Devices:

Zinc oxide  doped with gallium oxide sputtering targets thin films are utilized in semiconductor devices such as diodes and transistors, benefiting from their favorable electronic properties.

Gas Sensors:

Zinc oxide  doped with gallium oxide sputtering targets exhibits increased sensitivity and selectivity for gas detection, making it suitable for applications in environmental monitoring and safety devices.

Photovoltaic Cells:

In solar energy applications, Zinc oxide  doped with gallium oxide sputtering targets is used as a transparent conductive layer, improving the efficiency of photovoltaic cells by enhancing charge transport.

Thin Film Transistors (TFTs):

The material is utilized in thin film transistors for display technologies, contributing to improved performance and energy efficiency.

 

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