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Zinc Oxide Nanowire

Elements specializes in producing high purity uniform shaped Zinc Oxide Nanowires with the highest possible density for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical..

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                                                        Zinc Oxide Nanowire
Product No NRE-13015
CAS No.  1314-13-2
Formula ZnO
Average diameter 150-200nm
Average Length up to 15um
Purity 99.9%
Molecular Weight 231.84 g/mol
Density 5600 kg/m3
Melting Point 1,975 °C
Boiling Point 2,360 °C

Zinc Oxide Nanowire

Elements specialize in producing high purity uniform shaped Zinc Oxide Nanowires with the highest possible density for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low-Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Metal Wire sizes range from 0.75 mm to 1 mm to 2 mm diameter with strict tolerances and alpha values (conductive resistance) for uses such as gas detection and thermometry tolerances. Please contact us to fabricate custom wire alloys and gauge sizes. Materials are produced using crystallization, solid-state, and other ultra high purification processes such as sublimation.

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