ZnIn2Te4 Sputtering Targets
ZnIn2Te4 Sputtering Targets
| ZnIn2Te4 Sputtering Targets | |
| Product No | NRE-43630 |
| CAS No. | NA |
| Formula | ZnIn2Te4 |
| Molecular Weight | 805.45 |
| Purity | >99.9% |
| Density | 5.83 g/cm4 |
| Thickness | 3 mm ± 0.5mm (can be customized) |
| Diameter | 50 mm ± 1mm (can be customized) |
| Shape | Round |
| Resistivity | NA |
| Thermal Conductivity | NA |
ZnIn2Te4 Sputtering Targets
Introduction:
ZnIn2Te4 sputtering targets is a compound semiconductor known for its unique electronic and optical properties. It belongs to the family of chalcopyrite materials and is of particular interest in optoelectronic applications. Sputtering targets made from ZnIn₂Te₄ are used in physical vapor deposition (PVD) processes to create thin films for various advanced technologies.
Applications
Optoelectronic Devices: ZnIn₂Te₄ is utilized in the fabrication of optoelectronic components, such as photodetectors and light-emitting diodes (LEDs), due to its direct bandgap and ability to efficiently convert electrical energy into light.
Solar Cells: This material is explored for use in thin-film solar cells, where its semiconductor properties can contribute to improved efficiency in converting sunlight into electricity.
Thermoelectric Applications: ZnIn₂Te₄ has potential applications in thermoelectric devices, where it can be used for energy conversion, providing a means to generate electricity from temperature gradients.
Integrated Circuits: The compound can be integrated into semiconductor circuits, enhancing performance in various electronic applications due to its favorable electrical properties.
Infrared Detectors: ZnIn₂Te₄ is also investigated for use in infrared detection systems, benefiting from its ability to absorb and detect infrared radiation.
