Cadmium selenide Powder

Cadmium selenide Powder

Cadmium selenide Powder is one such semiconducting material. It is a semiconductor obtained by engineering cadmium-II group element and selenium-VI group element. This  Powder has drawn a lot of attention towards it due to its amazing property of possessing a good band gap value and for its optoelectronic properties. CdSe Powder of size less than 100 um exhibit quantum confinement and also they possess size dependent fluorescence spectrum. CdSe Powder has exceptional optical characteristics such as transmission, reflection, absorption and scattering. It is a direct band gap n-type semiconducting material with a band gap of 1.74 eV at 300 K2. When there is a considerable change in increase of annealing temperature, there is a gradual increase in the size of the crystal Cadmium selenide Powder and Eg value is found to be 2.3 eV at 573 K of annealing temperature. Also in many cases the optical absorption edge of CdSe is reported to be approximately 610-690 nm4-6. These make cadmium selenide to be a good semiconductor but in application point of view it can only be used as an n-type semiconductor. Hence to enhance the semiconducting property of CdSe addition of lead is preferred. CdSe powder had been reported to be successfully synthesized by microwave oven assisted polyol reduction method, aqueous phase approach method , photochemical synthesis process, hydrothermal method, solvothermal method, sol-gel approach, surfactant-assisted approach etc.