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Tungsten Titanium Tantalum Carbide Powder WC:TiC:TaC=50:30:20
October 5, 2017
Boron Nitride (BN) MicroPowder, BN
Boron Nitride (BN) MicroPowder, BN
October 5, 2017
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Carbon Aluminum Nitride Powder / Aluminum CarbonNitride Powder (AlNC, 99.5%, 1-3um)


Carbon Aluminum Nitride Powder / Aluminum CarbonNitride Powder (AlNC, 99.5%, 1-3um)

Carbon Aluminum Nitride Powder / Aluminum CarbonNitride Powder (AlNC, 99.5%, 1-3um)
Product No. CAS No. Formula Molecular Weight APS Purity Color Form
NRE-3042
7440-44-0/‎24304-00-5
AlNC  52.998938 g/mol 1-3um( can be customized) 99.5% Gray Powder
Density 3.260 g/cm3
Melting Point 2,200 °C
Boiling Point 4,541°C
Certificate of Analysis

N

Al

C

O

Fe

Si

Ca

34-36%

56-59%

4.5-5.8%

0.5%

0.05%

0.035%

0.02%

Carbon Aluminum Nitride Powder

The aluminum nitride crystal is grown epitaxially thin film is used to detect surface acoustic waves (SAW) deposited on the silicon wafer due to the piezoelectric properties of AlN. An application is an RF filter that is widely used in mobile phones, called thin-film sound resonator (FBAR). This is a MEMS device that uses aluminum nitride inserted between two metal layers.

The material slowly dissolves in mineral acids through grain edge attack and strong alkali from an attack on aluminum nitride grains. The material is slowly hydrolyzed in water. Aluminum nitride is resistant to the attack of most molten salts, including chlorides and cryolites.

Aluminum nitride is also used to build micromachined piezoelectric ultrasonic transducers, which emit and receive the ultrasound and can be used for field monitoring at distances of up to one meter.

Metallization methods are available to allow the use of AlN in electronic applications similar to those of alumina and beryllium oxide. AlN nanotubes as almost one-dimensional inorganic nanotubes, which are isoelectronic with carbon nanotubes, have been suggested as chemical sensors for toxic gases.

Currently, there is much research into the development of light-emitting diodes to work using ultraviolet based semiconductors and GaN, using the gallium and aluminum nitride alloy have been achieved wavelengths up to 250 nm. In May 2006, an inefficient emission of 210nm AlN LEDs was reported.

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