CVD Graphene on Silicon Wafer (Purity: 99.9%, Size: 1*1 cm, P-Doped)
| CVD Graphene on Silicon Wafer | |
| Product No | NRE-44006 |
| Type | P-Doped |
| Crystal method | CZ |
| Purity | > 99.9% |
| Thickness | 525 +/- 20 μm |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Doping | Boron |
| Resistivity | <0.005 Ω·cm |
| Orientation | <100> |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
CVD Graphene on Silicon Wafer
