CVD Graphene on Silicon Wafer
CVD Graphene on Silicon Wafer | |
Product No | NRE-44006 |
Type | P-Doped |
Crystal method | CZ |
Purity | > 99.9% |
Thickness | 525 +/- 20 μm |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Doping | Boron |
Resistivity | <0.005 Ω·cm |
Orientation | <100> |
Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
CVD Graphene on Silicon Wafer