Phosphorus Doped Silicon Wafer (4 inch, N Type)
Phosphorus Doped Silicon Wafer | |
Product No | NRE-44021 |
CAS | NA |
Crystal method | CZ |
Type | N-Type |
Diameter (mm) | 4″ (101.6mm) |
Doping | Phosphorous |
Thickness | 250-500μm |
Crystal Orientation | <100> |
Resistivity | 1-10ohm-cm |
RRG (%) | ≤12 % |
Oxygen Contents (ppma) | 12.5-16.5 |
Phosphorus Doped Silicon Wafer