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Phosphorus Doped Silicon Wafer (4 inch, N Type)

Phosphorus Doped Silicon Wafer
Product No NRE-44021
CAS NA
Crystal method CZ
Type N-Type
Diameter (mm) 4″ (101.6mm)
Doping Phosphorous
Thickness 250-500μm
Crystal Orientation <100>
Resistivity 1-10ohm-cm
RRG (%) ≤12 %
Oxygen Contents (ppma) 12.5-16.5

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