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DSP Silicon Wafer P Type (12″,Boron Doped)

DSP Silicon Wafer P Type
Product No NRE-44009
Type P Type
Impurity ≦1E10 Atoms/cm²
Crystal method CZ
Thickness 775±25μm
Diameter (mm) 12” (300±0.2mm)
Doping Boron
Resistivity 1-100Ω/cm
Particle ≦50 @ 0.20µm

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