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DSP Silicon Wafer P Type (2″, Boron Doped)

DSP Silicon Wafer P Type
Product No NRE-44010
Type P Type
Crystal method CZ
Crystal Orientation <100>
Thickness 450 μm
Diameter (mm) 2” (50.8mm)
Doping Boron
Resistivity 1-100Ω/cm
Surface Double Side Polished

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