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High Purity Silicon Wafer

High Purity Silicon Wafer
Product No NRE-44014
Type N-Type
Crystal method CZ
Crystal Orientation 12.5-16.5 ppma
Thickness 250-500μm
Diameter (mm) 4” (101.6mm)
Doping Boron
Resistivity 1-10ohm-cm
Surface Single Side Polished
RRG (%) ≤12 %

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