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GaN Substrate (Purity: >99.9%, Diameter: 4″, Si-Doped, N type)

GaN Substrate (Purity: >99.9%, Diameter: 4″, Si-Doped, N type)
Product No. CAS Purity Doping Diameter Structure Color Thickness
NRE-45007 25617-97-4 >99.9% Si-doped 2″ NA NA 4 µm ± 1µm
Polished Single Side Polished
Melting Point NA
Boiling Point NA
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