GaN Substrate (Purity: >99.9%, Diameter: 4″, Si-Doped, N type)
| GaN Substrate | |
| Product No | NRE-45007 |
| CAS | 25617-97-4 |
| Purity | >99.9% |
| Doping | Si-doped |
| Diameter | 4″ |
| Structure | NA |
| Color | NA |
| Thickness | 4 µm ± 1µm |
| Polished | Single Side Polished |
| Boiling Point | NA |
GaN Substrate
