Germanium Selenide Sputtering Targets
Germanium Selenide Sputtering Targets
Germanium Selenide Sputtering Targets | |
Product No | NRE-43434 |
CAS No. | 12065-11-1 |
Formula | GeSe2 |
Molecular Weight | 230.6 g/mol |
Purity | >99.9% |
Density | 4.56 g/cm3 |
Thickness | 3 mm ± 0.5mm (can be customized) |
Diameter | 50 mm ± 1mm (can be customized) |
Shape | Round |
Resistivity | NA |
Thermal Conductivity | NA |
Germanium Selenide Sputtering Targets
Germanium selenide (GeSe) sputtering targets have several applications, particularly in the fields of electronics and optoelectronics. Here are some notable applications.
Phase-Change Materials: GeSe is used in phase-change memory devices due to its ability to switch between amorphous and crystalline states, allowing for data storage.
Photovoltaics: It can be employed in thin-film solar cells, providing a material with suitable electronic and optical properties for light absorption and conversion.
Optical Devices: Germanium selenide is used in the fabrication of optical coatings and waveguides, benefiting from its transparency in the infrared range.
Thermoelectric Materials: GeSe is explored for thermoelectric applications, where it can convert temperature differences into electric voltage, useful in energy harvesting.
Sensors: Its semiconductor properties make it suitable for use in various sensing applications, particularly in photodetectors.
Electronic Devices: GeSe can be incorporated into transistors and other electronic components to improve performance and miniaturization.
These applications leverage the unique properties of germanium selenide, including its bandgap and thermal stability, making it valuable in advanced material development.