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Germanium Sputtering Target (Ge, Purity: 99.99%)

Germanium Sputtering Target

Germanium Sputtering Target
Product No NRE-43057
CAS No. 7440-56-4
Formula Ge
Molecular Weight 72.61 g/mol
Purity 99.99%
Density 5.323 g/cm³
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Expansion NA

Germanium Sputtering Target

Germanium sputtering targets are specialized materials used to create thin films of germanium through the sputtering process, a physical vapor deposition (PVD) technique. These targets are typically made from high-purity germanium and are crucial for producing films with specific electrical, optical, and mechanical properties.

Germanium sputtering target a semiconductor with a bandgap of approximately 0.66 eV, has unique characteristics that make it highly desirable for a variety of applications in modern technology. Its compatibility with silicon and excellent charge carrier mobility are particularly noteworthy, enabling the development of high-performance electronic devices.

Applications

Semiconductor Devices: Ge is used in high-speed transistors and diodes, playing a vital role in enhancing the performance of electronic circuits.

Thin-Film Transistors (TFTs): In displays and flexible electronics, germanium films improve charge carrier mobility, resulting in better performance and efficiency.

Photovoltaics: Ge is essential in multi-junction solar cells, where it serves as a bottom cell layer, enhancing overall solar energy conversion efficiency.

Optoelectronics: Germanium films are utilized in photodetectors and infrared sensors, benefiting from their sensitivity in the infrared spectrum.

Microelectromechanical Systems (MEMS): Germanium is incorporated in MEMS devices for its mechanical properties and compatibility with silicon technology.

Thermoelectric Applications: Ge can be used in thermoelectric devices to convert temperature differences into electrical energy, making it useful for energy harvesting.

 

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