Germanium Zinc Alloy Sputtering Targets
Germanium Zinc Alloy Sputtering Targets
Germanium Zinc Alloy Sputtering Targets | |
Product No | NRE-43435 |
CAS No. | 12025-43-3 |
Formula | ZnGe |
Molecular Weight | 137.85 |
Purity | >99.9% |
Density | NA |
Thickness | 3 mm ± 0.5mm (can be customized) |
Diameter | 50 mm ± 1mm (can be customized) |
Shape | Round |
Resistivity | NA |
Thermal Conductivity | NA |
Germanium Zinc Alloy Sputtering Targets
Germanium zinc (GeZn) alloy sputtering targets are used in various applications, particularly in the fields of electronics and optoelectronics. Germanium zinc (GeZn) alloy sputtering targets are materials used in the sputtering process to deposit thin films of germanium zinc alloys onto various substrates. These targets combine the properties of germanium, a well-known semiconductor, with those of zinc, which can enhance electrical and optical characteristics.
GeZn alloys are particularly valued for their tunable bandgap and unique electronic properties, making them suitable for a range of applications in advanced technology sectors. The ability to adjust the composition of the alloy allows for optimization in specific applications, such as photovoltaics and optoelectronics.
Semiconductor Devices: GeZn alloys can be used to create semiconductor layers, benefiting from the unique electronic properties that arise from the combination of germanium and zinc.
Photovoltaic Cells: The alloy may be employed in thin-film solar cells, where it can enhance light absorption and improve overall efficiency.
Optoelectronic Devices: GeZn can be used in the fabrication of photodetectors and light-emitting devices, capitalizing on its suitable bandgap for efficient light interaction.
Thin-Film Transistors (TFTs): This alloy can be utilized in TFTs, particularly in display technologies, where its properties can enhance performance and responsiveness.
Sensing Applications: The unique properties of GeZn alloys make them suitable for various sensor applications, including gas sensors and infrared detectors.
Alloying for Doping: Zinc can act as a dopant to modify the electrical properties of germanium, enhancing the performance of semiconductor devices.