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Indium Nitride Powder

Indium Nitride Powder

Indium Nitride Powder
Product No NRE-11125
CAS 25617-98-5
Purity 99.9%
Formula InN
APS <40 µm (can be customized)
Color black
Molecular Weight 128.82 g/mol
Density 6.81 g/cm3
Melting Point 1100 °C
Boiling Point NA

Indium Nitride Powder

InN Powder is a semiconductor which has potentially important applications in manufacturing of optoelectronic devices. Due to the direct bandgap of 1.89 eV, InN Powder can be used in fabrication of highly efficient light emitting diodes and solar cells despite its importance InN Powder thermodynamic, optical and thermal properties have not been investigated thoroughly. Due to the thermodynamic properties of the In + Nz system, Indium nitride Powder is extremely difficult to synthesize. The high bonding energy of the N2 molecule and the relatively low bonding energy of InN Powder makes direct growth from the constituents (In and N2) extremely difficult. Therefore the most successful method of IInN Powder synthesis is based on chemical reduction reaction. Unfortunately, InN Powder obtained by this method is a submicron grain size powder which is not suitable for measurements of physical properties. They allow activation of nitrogen which is necessary for efficient growth of InN from liquid In at temperatures above 700°C. This method has been used in the growth of InN powder. Thermal properties of InN powder, obtained by investigation of InN crystals, grown by the plasma method, are presented in this paper.

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