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Iron Silicide Sputtering Targets

Iron Silicide Sputtering Targets

Iron Silicide Sputtering Targets
Product No NRE-43467
CAS No. 12022-99-0
Formula FeSi2
Molecular Weight 112.016 g/mol
Purity >99.9%
Density 4.74 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Iron Silicide Sputtering Targets

Introduction

Iron silicide (FeSi) sputtering targets are materials used in the sputtering deposition process to create thin films of iron silicide on various substrates. Iron silicides are intermetallic compounds that exhibit unique electrical, thermal, and magnetic properties, making them valuable in a range of advanced applications. These compounds are particularly noted for their use in semiconductor technology and their potential for high-performance applications.

Applications

Iron silicide is used in the fabrication of contacts and interconnects in semiconductor devices due to its good electrical conductivity and compatibility with silicon substrates.

Thin-Film Transistors:

FeSi films can be utilized in thin-film transistors (TFTs), which are important in display technologies and electronic circuits.

Magnetic Applications:

Iron silicide has magnetic properties that can be exploited in magnetic sensors and data storage devices, contributing to enhanced performance in these applications.

Thermal Management:

The thermal properties of iron silicide make it suitable for applications in thermal management systems, such as heat sinks and thermal interfaces in electronics.

Optoelectronic Devices:

Iron silicide thin films can be used in optoelectronic devices, enhancing their performance in applications such as photodetectors and photovoltaic cells.

Research and Development:

FeSi is frequently used in research settings to explore novel materials and phenomena in condensed matter physics and materials science, including studies on phase transitions and electronic properties.

 

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