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Lanthanum Selenide Sputtering Targets

Lanthanum Selenide Sputtering Targets

Lanthanum Selenide Sputtering Targets
Product No NRE-43476
CAS No. 12031-51-5
Formula La2Se3
Molecular Weight 514.69
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Lanthanum Selenide Sputtering Targets

Introduction

Lanthanum selenide (La2Se3) is a compound that has gained interest due to its unique electronic, optical, and thermal properties. As a chalcogenide semiconductor, La2Se3 is particularly noted for its potential applications in optoelectronics and photonics. Sputtering targets made from lanthanum selenide are utilized for creating high-quality thin films that can be employed in various advanced technological applications.

Applications

Optoelectronic Devices:

La2Se3 is used in the fabrication of optoelectronic devices such as photodetectors and light-emitting diodes (LEDs), leveraging its semiconductor properties for efficient light emission and detection.

Thin Film Solar Cells:

The material shows promise for use in thin film solar cells, where its absorption properties can enhance light harvesting and conversion efficiency in photovoltaic applications.

Infrared Sensors:

Due to its semiconductor characteristics, lanthanum selenide can be applied in infrared sensing technologies, making it suitable for thermal imaging and environmental monitoring.

Thermoelectric Devices:

La2Se3 may be explored for use in thermoelectric materials, which convert temperature differences into electrical energy, potentially improving energy harvesting technologies.

Chalcogenide Glasses:

As a component in chalcogenide glass systems, lanthanum selenide can be used in optical fibers and lenses, particularly for mid-infrared applications, enhancing performance in optical communications.

Magnetic and Electronic Applications:

The unique properties of La2Se3 make it a candidate for research into new magnetic and electronic devices, potentially leading to innovations in spintronics and advanced magnetic storage.

 

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