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Lead Lanthanum Zirconium Titanate Sputtering Targets

Lead Lanthanum Zirconium Titanate Sputtering Targets

Lead Lanthanum Zirconium Titanate Sputtering Targets
Product No NRE-43243
CAS No. 12676-60-7
Formula Pb1-xLax(ZryTi1-y)1-0.25xO3
Molecular Weight NA
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Lead Lanthanum Zirconium Titanate Sputtering Targets

Applications

Lead lanthanum zirconium titanate (PLZT) is a perovskite material known for its excellent piezoelectric, ferroelectric, and electro-optic properties. Sputtering targets made from PLZT are utilized in various applications:

Optical Devices: PLZT is commonly used in optical modulators and switches due to its electro-optic effect. This makes it ideal for applications in telecommunications and advanced imaging systems.

Sensors: The piezoelectric properties of PLZT make it suitable for various sensor applications, including pressure, acceleration, and acoustic sensors.

Actuators: PLZT is used in actuators where precise control is needed, such as in micro-electromechanical systems (MEMS) and various industrial applications.

Memory Devices: Due to its ferroelectric properties, PLZT is investigated for use in non-volatile memory devices, which can retain information without a power supply.

Thin-Film Capacitors: PLZT films are utilized in capacitors for their high dielectric constant, making them effective in improving energy storage in electronic circuits.

Ferroelectric Random Access Memory (FeRAM): PLZT’s ferroelectric properties lend themselves to FeRAM technology, which aims for faster and more efficient memory solutions.

Conclusion

PLT sputtering targets are pivotal in producing thin films for a range of high-tech applications, from advanced optical systems to next-generation memory devices. Their unique combination of electrical and optical properties continues to drive research and development in various fields.

 

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