Manganese Telluride Sputtering Targets
Manganese Telluride Sputtering Targets
Manganese Telluride Sputtering Targets | |
Product No | NRE-43490 |
CAS No. | 12032-89-2 |
Formula | MnTe2 |
Molecular Weight | 310.13 |
Purity | >99.9% |
Density | NA |
Thickness | 3 mm ± 0.5mm (can be customized) |
Diameter | 50 mm ± 1mm (can be customized) |
Shape | Round |
Resistivity | NA |
Thermal Conductivity | NA |
Manganese Telluride Sputtering Targets
Introduction:
Manganese telluride (MnTe2) Sputtering targets are materials used in the deposition of thin films, notable for their unique semiconducting and magnetic properties. MnTe is a compound that combines manganese and tellurium, making it relevant in various advanced technological applications, especially in electronics and materials science.
Applications:
Semiconductor Devices:
MnTe is used in fabricating thin films for semiconductor devices, including transistors and diodes, benefiting from its favorable electronic properties.
Optoelectronics:
Employed in the production of photodetectors and light-emitting devices (LEDs), enhancing performance in optical applications.
Magnetic Materials:
Manganese telluride exhibits interesting magnetic properties, making it useful in spintronic devices and magnetic sensors, which leverage its ferromagnetic behavior.
Thermoelectric Applications:
MnTe can be used in thermoelectric materials, contributing to energy conversion technologies that harness temperature gradients.
Research and Development:
Often utilized in R&D to explore new material properties and applications, particularly in fields focused on next-generation electronics and energy solutions.
Thin Film Deposition: Used in physical vapor deposition (PVD) processes for creating thin films in semiconductor devices, sensors, and other electronic components.