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Lanthanum Hexaboride LaB6 Powder / LaB6 Lanthanum Boride Powder (High purity 99.9%, 1-20um)
October 6, 2017
Molybdenum Disulfide Powder / MoS2 Powder (MoS2, 800nm-1.2um, 99.9%, black)
October 6, 2017
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Mg3N2 Powder / Magnesium Nitride Powder (Mg3N2, 99.5%, 40um)

principal use: in hot cathodes, either as a single crystal or as a coating deposited by physical vapor deposition. LaB6 is also used as a size/strain standard in X-ray powder diffraction to calibrate instrumental broadening of diffraction peaks. LaB6 is a superconductor with a relatively low transition temperature of 0.45 K. — in radar aerospace, in electronics industry

Mg3N2 Powder / Magnesium Nitride Powder (Mg3N2, 99.5%, 40um)

Mg3N2 Powder / Magnesium Nitride Powder (Mg3N2, 99.5%, 40um)
Product No. CAS No. Formula Molecular Weight APS Purity Color Form
NRE-3055 12057-71-5 Mg3N2 100.93g/mol 40um(can be customized) 99.5% yellow Powder
Density 2.71g/cm3
Melting Point 1500°C
Boiling Point 2545°C
Magnesium Nitride Certificate of Analysis









The basic characteristics of magnesium nitride Powder:

A magnesium nitride ceramic powder is a light yellow powder. Chemical formula: Mg3N2; Molecular weight: 100.93; Relative density of 2.71 (25/4 oC); Decomposition point: 800 oC; Hexagonal glass system. The compound can be dissolved in acid, slightly soluble in ethanol and ether. In moist air or water, it can decompose into magnesium hydroxide and release ammonia;

Magnesium nitride ceramic powder can be used in the preparation of another nitride compound with high hardness, high thermal conductivity, corrosion resistance, wear resistance and high-temperature resistance properties; It can be used for the preparation of special ceramic material and for special alloy blowing agents; It can be used for the production of special glass and catalyzed cross-linked polymers; It can also be used to produce synthesis of synthetic diamond catalytic materials and cubic boron nitride and for high strength steel casting additives; In addition, magnesium nitride is a bandwidth of 2.8 eV. The direct band-wide semiconductor in the preparation of light-emitting diodes has a potential application value.

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