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Silicon Nanowires

Elements specializes in producing high-puritySilicon Nanowires via chemical vapor deposition (CVD) on silicon wafers using gold as a catalyst. Silicon nanowires are available in single side and double side coated forms; we can also produce nanowires to custom specifications and in bulk quantites.

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Silicon Nanowires
Product No NRE-13009
CAS No.  7440-21-3
Formula Si
Average diameter 150-200nm
Average Length up to 15um
Purity 99.9%
Molecular Weight 28.08 g/mol
Density 2.33 g/cm3
Melting Point 1,414 °C
Boiling Point 3,265 °C

Silicon Nanowires

Elements specialize in producing high-purity Nano wires via chemical vapor deposition (CVD) on silicon wafers using gold as a catalyst. These  are available in a single side and double side coated forms; we can also produce nano wires to custom specifications and in bulk quantities. The unique thermal and chemical properties of these nanowires make them ideal materials for numerous electrical and optical applications, photovoltaics, sensors, transistors, piezoelectric generators, and energy storage technologies.

Si nanowires are one of the most important 1D semiconductors, partly due to their ready implementation in modern industry in established processes. Silicon nanowires are expected to play a key role in applications such as solar cells, sensors, lithium batteries, and catalysts with regard to their surface-dependent properties. In this article, we review the current status of Silicon nanowires research, especially the synthesis, properties, and applications of these materials. The advantage is that Silicon nanowires can be synthesized in high purity, high yield, and large quantity by this high-temperature laser evaporation method. The fast growth rate and the uniformly smooth curving feature of the nanowires are significantly different from the stiff whiskers grown from the vapor-liquid-solid mechanism.Yet; the need of low wavelength, high-energy, focused pulsed lasers prevents the method from having wide application.

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