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SOI Wafer 4 P Type (Purity: 99.9% Dia: 4”(100mm)CZ Thickness: 430µm)

SOI Wafer 4 P Type
Product No NRE-44041
CAS 7440-21-3
Type  P-type
Crystal method CZ
Diameter (mm) 4” (100mm)
Thickness  430µm
Oxygen Contents 12.5-16.5 ppma
Doping Boron
Resistivity 0-100Ωcm

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