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Tantalum Arsenide Sputtering Targets

Tantalum Arsenide Sputtering Targets

Tantalum Arsenide Sputtering Targets
Product No NRE-43558
CAS No. NA
Formula TaAs
Molecular Weight 255.87
Purity >99.9%
Density 12.25 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Tantalum Arsenide Sputtering Targets

Applications

Tantalum arsenide sputtering targets are used in various specialized applications due to their unique electronic and material properties. Here are some key applications.

Semiconductor Devices:

High-Performance Electronics: Tantalum arsenide is used in the fabrication of advanced semiconductor devices, particularly in applications requiring high electron mobility, such as high-frequency transistors and microwave devices.

Thin Film Transistors:

Used in thin film transistors (TFTs) for displays and other electronic devices, where the properties of TaAs contribute to improved performance and efficiency.

Photovoltaics:

Tantalum arsenide can be employed in thin-film solar cells, helping to enhance light absorption and overall energy conversion efficiency.

Optoelectronics:

Due to its unique optical properties, TaAs is utilized in optoelectronic devices, such as photodetectors and light-emitting diodes (LEDs).

Research Applications:

TaAs is of interest in materials science research, particularly in studies involving topological insulators and quantum materials, which have implications for future electronic and spintronic devices.

Thermal Management:

The thermal properties of tantalum arsenide make it suitable for applications in thermal management solutions, helping to dissipate heat in high-performance electronics.

 

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