Tantalum Arsenide Sputtering Targets
Tantalum Arsenide Sputtering Targets
Tantalum Arsenide Sputtering Targets | |
Product No | NRE-43558 |
CAS No. | NA |
Formula | TaAs |
Molecular Weight | 255.87 |
Purity | >99.9% |
Density | 12.25 g/cm3 |
Thickness | 3 mm ± 0.5mm (can be customized) |
Diameter | 50 mm ± 1mm (can be customized) |
Shape | Round |
Resistivity | NA |
Thermal Conductivity | NA |
Tantalum Arsenide Sputtering Targets
Applications
Tantalum arsenide sputtering targets are used in various specialized applications due to their unique electronic and material properties. Here are some key applications.
Semiconductor Devices:
High-Performance Electronics: Tantalum arsenide is used in the fabrication of advanced semiconductor devices, particularly in applications requiring high electron mobility, such as high-frequency transistors and microwave devices.
Thin Film Transistors:
Used in thin film transistors (TFTs) for displays and other electronic devices, where the properties of TaAs contribute to improved performance and efficiency.
Photovoltaics:
Tantalum arsenide can be employed in thin-film solar cells, helping to enhance light absorption and overall energy conversion efficiency.
Optoelectronics:
Due to its unique optical properties, TaAs is utilized in optoelectronic devices, such as photodetectors and light-emitting diodes (LEDs).
Research Applications:
TaAs is of interest in materials science research, particularly in studies involving topological insulators and quantum materials, which have implications for future electronic and spintronic devices.
Thermal Management:
The thermal properties of tantalum arsenide make it suitable for applications in thermal management solutions, helping to dissipate heat in high-performance electronics.