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Tungsten Telluride Sputtering Targets

Tungsten Telluride Sputtering Targets

Tungsten Telluride Sputtering Targets
Product No NRE-43594
CAS No. 12067-76-4
Formula WTe2
Molecular Weight 439.04
Purity >99.9%
Density 9.43 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Tungsten Telluride Sputtering Targets

Introduction:

Tungsten telluride sputtering targets is a layered transition metal dichalcogenide known for its unique electronic properties, including high electrical conductivity and potential topological insulator behavior. This compound has garnered significant attention in recent years due to its applications in advanced materials science and electronics. Sputtering targets made from tungsten telluride are utilized in physical vapor deposition (PVD) processes to create thin films with tailored properties for a variety of cutting-edge applications.

Applications

Electronics: WTe₂ is used in the fabrication of high-performance electronic devices, such as field-effect transistors (FETs), where its excellent charge transport properties enhance device performance.

Topological Insulators: Due to its unique electronic structure, tungsten telluride is being explored for applications in topological insulators, which can potentially lead to advances in quantum computing and spintronics.

Optoelectronic Devices: WTe₂ films can be utilized in photodetectors and other optoelectronic applications, leveraging their ability to absorb and emit light efficiently.

Energy Storage: Tungsten telluride is being researched for applications in batteries and supercapacitors, where its properties can improve energy storage and conversion efficiencies.

Thermoelectric Devices: WTe₂ exhibits promising thermoelectric properties, making it suitable for applications in energy harvesting and cooling technologies.

 

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