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Gallium Sulfide Sputtering Targets

Gallium Sulfide Sputtering Targets

Gallium Sulfide Sputtering Targets
Product No NRE-43423
CAS No. 12024-22-5
Formula Ga2S3
Molecular Weight 235.644 g/mol
Purity >99.9%
Density 3.77 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Gallium Sulfide Sputtering Targets

Gallium sulfide (GaS) sputtering targets are used in various applications due to their semiconductor properties and unique characteristics. Here are some key applications.

Optoelectronics

Light-Emitting Diodes (LEDs): GaS is used in the fabrication of LEDs, particularly in the green and blue regions of the spectrum.

Laser Diodes: It can be employed in laser diodes, contributing to efficient light generation.

Photodetectors

Infrared and Visible Light Sensors: GaS is utilized in photodetectors for detecting infrared and visible light, making it suitable for imaging and sensing applications.

 Solar Cells

Thin-Film Photovoltaics: GaS can be used as a light-absorbing layer in thin-film solar cells, enhancing the overall efficiency of energy conversion.

Nonlinear Optical Applications

Frequency Doubling: GaS exhibits nonlinear optical properties that can be utilized in frequency conversion and other nonlinear optical devices.

2D Materials Research

Layered Semiconductor Studies: GaS is a member of the transition metal dichalcogenides (TMDs) and is of interest in research for developing new two-dimensional materials for advanced electronics.

 Thin Film Transistors (TFTs)

Display Technologies: GaS can be used in the production of TFTs, improving performance in flat-panel displays and other electronic devices.

Summary

Gallium sulfide sputtering targets are versatile materials in optoelectronics, sensing technologies, and renewable energy applications. Their semiconductor properties make them valuable for a range of innovative technologies.

 

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