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GaN Wafer (Purity: >99.9%, Diameter: 2″, Si-Doped, N type)

GaN Wafer
Product No NRE-45008
CAS 25617-97-4
Purity >99.9%
Doping Si-doped
Diameter 2″
Structure NA
Color NA
Thickness 4 µm ± 1µm
Polished Single Side Polished
Boiling Point NA

GaN Wafer

Introduction:

Gallium Nitride (GaN) is a wide bandgap semiconductor material that has gained significant attention in recent years for its application in high-power and high-frequency devices. Unlike traditional silicon, GaN offers advantages such as higher efficiency, higher temperature tolerance, and better performance in harsh environments. These characteristics make GaN wafers particularly suitable for a variety of applications, including power electronics, RF communications, and optoelectronics.

Applications

Power Electronics:

Power Amplifiers: GaN wafers are used in RF power amplifiers for applications such as cellular base stations and satellite communications due to their high efficiency and power density.

Switching Devices: GaN transistors are employed in power converters, inverters, and chargers, offering improved efficiency and reduced size compared to silicon-based solutions.

RF and Microwave Devices:

GaN is widely used in high-frequency applications, including radar systems, satellite communications, and wireless infrastructure, where its high electron mobility and saturation velocity allow for better performance.

LED Technology:

GaN wafers are critical in the production of blue and white LEDs. The ability to create efficient light-emitting diodes has led to advancements in solid-state lighting and display technologies.

Electric Vehicles (EVs):

The automotive industry leverages GaN technology for power electronics in EVs, improving efficiency and reducing the size and weight of components such as onboard chargers and inverters.

Telecommunications:

GaN is used in telecommunications equipment to enhance signal integrity and increase the range and efficiency of communication systems.

 

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