GaN Wafer (Purity: >99.9%, Diameter: 2″, Si-Doped, N type)
GaN Wafer | |
Product No | NRE-45008 |
CAS | 25617-97-4 |
Purity | >99.9% |
Doping | Si-doped |
Diameter | 2″ |
Structure | NA |
Color | NA |
Thickness | 4 µm ± 1µm |
Polished | Single Side Polished |
Boiling Point | NA |
GaN Wafer
Introduction:
Gallium Nitride (GaN) is a wide bandgap semiconductor material that has gained significant attention in recent years for its application in high-power and high-frequency devices. Unlike traditional silicon, GaN offers advantages such as higher efficiency, higher temperature tolerance, and better performance in harsh environments. These characteristics make GaN wafers particularly suitable for a variety of applications, including power electronics, RF communications, and optoelectronics.
Applications
Power Electronics:
Power Amplifiers: GaN wafers are used in RF power amplifiers for applications such as cellular base stations and satellite communications due to their high efficiency and power density.
Switching Devices: GaN transistors are employed in power converters, inverters, and chargers, offering improved efficiency and reduced size compared to silicon-based solutions.
RF and Microwave Devices:
GaN is widely used in high-frequency applications, including radar systems, satellite communications, and wireless infrastructure, where its high electron mobility and saturation velocity allow for better performance.
LED Technology:
GaN wafers are critical in the production of blue and white LEDs. The ability to create efficient light-emitting diodes has led to advancements in solid-state lighting and display technologies.
Electric Vehicles (EVs):
The automotive industry leverages GaN technology for power electronics in EVs, improving efficiency and reducing the size and weight of components such as onboard chargers and inverters.
Telecommunications:
GaN is used in telecommunications equipment to enhance signal integrity and increase the range and efficiency of communication systems.