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GeTeSe Sputtering Targets

GeTeSe Sputtering Targets

GeTeSe Sputtering Targets
Product No NRE-43436
CAS No. NA
Formula GeTeSe
Molecular Weight NA
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

GeTeSe Sputtering Targets

Introduction

GeTeSe is a chalcogenide material composed of germanium (Ge), tellurium (Te), and selenium (Se). Known for its unique properties, including tunable band gaps and high optical nonlinearity, GeTeSe has gained attention in the fields of electronics and photonics. Sputtering targets made from GeTeSe are used in thin-film deposition techniques to create layers with specific characteristics for various applications.

Applications

Phase-Change Memory (PCM):

GeTeSe exhibits excellent phase-change properties, making it ideal for non-volatile memory applications. It allows for rapid switching between amorphous and crystalline states, enabling high-speed data storage and retrieval.

Optoelectronic Devices:

Due to its tunable optical properties, GeTeSe can be used in devices like photodetectors, infrared sensors, and waveguides. Its ability to manipulate light at different wavelengths is beneficial for advanced optical communication systems.

Thermoelectric Materials:

The compound’s favorable thermoelectric properties allow it to be utilized in thermoelectric generators and coolers, converting heat into electricity or vice versa efficiently.

Transparent Conducting Films:

GeTeSe can be used in applications requiring transparent conductive coatings, such as displays and solar cells, where both transparency and conductivity are needed.

Laser Technology:

Its high nonlinear optical response makes GeTeSe suitable for laser applications, particularly in the development of high-performance laser systems for various scientific and industrial uses.

 

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