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Indium Telluride Sputtering Targets

Indium Telluride Sputtering Targets

Indium Telluride Sputtering Targets
Product No NRE-43450
CAS No. 1312-45-4
Formula In2Te3
Molecular Weight 612.44
Purity >99.9%
Density 5.75 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Indium Telluride Sputtering Targets

Introduction

Indium telluride (In₂Te₃) sputtering targets are specialized materials used for the deposition of thin films in various electronic and optoelectronic applications. This compound semiconductor exhibits notable properties that make it suitable for advanced technologies, particularly in infrared optics and photovoltaic devices.

Applications:

Infrared Detectors: In₂Te₃ is widely used in infrared photodetectors due to its sensitivity to infrared radiation, making it essential for thermal imaging and spectroscopy.

Photovoltaic Devices: Indium telluride is explored for use in thin-film solar cells, where its properties can enhance energy conversion efficiency, particularly in multi-junction solar cells.

Optoelectronic Devices: The direct bandgap of In₂Te₃ allows it to be used in light-emitting diodes (LEDs) and laser diodes, particularly in applications that require infrared light.

Thermoelectric Devices: Indium telluride has applications in thermoelectric devices, where it can be used for energy harvesting and temperature measurement.

Research Applications: In₂Te₃ is also studied in various research settings to explore its potential in novel electronic and optoelectronic materials.

 

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