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Silicon Carbide Wafer N Types (2″, Phosphorus Doped)

Silicon Carbide Wafer N Types
Product No NRE-44024
CAS 1344-28-1
Type N-Type
Doping Phosphorous
Crystal method CZ
Surface Single Side Polished
Diameter (mm) 2” (50.8mm)
Thickness 275 μm
Resistivity 1-10ohm-cm
Oxygen Contents 12.5-16.5 ppma

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