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Sodium Niobate Sputtering Targets

Sodium Niobate Sputtering Targets

Sodium Niobate Sputtering Targets
Product No NRE-43272
CAS No. 12034-09-2
Formula NaNbO3
Molecular Weight 163.89
Purity >99.9%
Density 4.42 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Sodium Niobate Sputtering Targets

Introduction:

Sodium niobate sputtering targets is a perovskite oxide that has garnered significant attention in materials science and engineering due to its unique ferroelectric, piezoelectric, and optical properties. As a sputtering target, sodium niobate is utilized in the deposition of thin films for various applications, particularly in electronics and optoelectronics. The sputtering process involves bombarding the NaNbO₃ target with energetic particles, resulting in the ejection of niobium and sodium atoms that can be deposited onto a substrate.

Applications:

Ferroelectric Devices: Sodium niobate is widely used in the fabrication of ferroelectric devices, including capacitors and non-volatile memory applications. Its ferroelectric properties make it suitable for storing information.

Piezoelectric Sensors and Actuators: Due to its piezoelectric characteristics, NaNbO₃ is employed in sensors and actuators, which convert mechanical stress into electrical signals and vice versa. These devices are crucial in various applications, including automotive and aerospace industries.

Optical Devices: Sodium niobate thin films can be used in optical applications, such as waveguides and electro-optic devices. Their unique optical properties enable modulation of light, making them suitable for telecommunications and photonic applications.

Surface Coatings: The films deposited from sodium niobate can provide protective and functional coatings, enhancing the durability and performance of electronic components in harsh environments.

Multiferroic Materials: Research into sodium niobate has explored its potential as a multiferroic material, which exhibits both ferroelectric and magnetic properties. This characteristic opens new avenues for next-generation devices in spintronics and information storage.

 

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